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New Memory: 500-1000 Times Faster Than Flash新的记忆体: 500-1000倍,速度比闪存

Wed, Dec 13, 2006周三, 2006年12月13日

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Phase-Change Memory.

What do you think about new memories that are 500 to 1,000 times faster than our current flash memories?您怎么看新的记忆是500到1000倍,速度比我们目前的快闪记忆体? Wicked eh?邪恶的吧? And how about using only half the power?以及如何使用只有一半的权力?

The researchers from IBM, Macronix, and Qimonda who created it are calling it the “phase-change” memory.研究人员来自IBM ,旺宏,奇梦达谁创造了它称为“相变”内存。 Imagine the possibilities if it ever comes true.想象的可能性,如果它以往任何时候都成真。 Instant-on computers, unlimited and continuous shots in RAW for DSLR cameras, longer-lasting MP3 players, and so much more!即时的电脑上,无限的和持续的镜头在原料为数码单镜反光相机相机,持续时间更长的MP3播放器,所以还有更多!

Spike Narayan, senior manager of nanoscale science in IBM, also said that Samsung and Intel have both been working with phase-change memory devices.穗纳拉扬,高级经理纳米科学在IBM公司也表示,三星电子和英特尔都被工作与相变记忆体装置。

The future looks good!未来看起来很不错!


Source:资料来源: yahoo.com

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